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IXFH24N60X - Power MOSFET

Download the IXFH24N60X datasheet PDF. This datasheet also covers the IXFA24N60X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA24N60X-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH24N60X N-Channel MOSFET INCHANGE
IXFH24N65X2 N-Channel MOSFET INCHANGE
IXFH24N50 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching IXYS Corporation
IXFH24N50 Power MOSFET IXYS Corporation
IXFH24N50Q Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH24N50S Power MOSFET
IXFH20N50P3 Power MOSFET
IXFH20N85X Power MOSFET
IXFH21N50Q Power MOSFET
IXFH220N06T3 Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA24N60X IXFP24N60X IXFQ24N60X IXFH24N60X TO-263 AA (IXFA) VDSS = ID25 = RDS(on) 600V 24A 175m TO-220AB (IXFP) G S D (Tab) GD S TO-3P (IXFQ) D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 24 48 8 500 50 400 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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