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HiPerFETTM Power MOSFETs
Q Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg
IXFH 13N80Q IXFT 13N80Q
VDSS ID25 RDS(on)
= = =
800 V 13 A 0.70 W
trr £ 250 ns
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 13 52 13 28 750 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
TO-247 AD (IXFH)
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.
IXFH13N80Q Datasheet
