Datasheet4U Logo Datasheet4U.com

IS66WVD4M16ALL - 64Mb Async and Burst CellularRAM

Description

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

  • Single device supports asynchronous and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • Multiplexed address and data bus.
  • ADQ0~ADQ15.
  • Asynchronous mode read access : 70ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16 or Continuous.
  • Low Power Consumption.
  • Asynchronous Operation < 25 mA.
  • Burst operation < 35 mA (@10.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS66WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS660 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM
IS661 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM
IS662 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WVD1M16ALL 16Mb Async and Burst CellularRAM
IS66WVD2M16ALL 32Mb Async and Burst CellularRAM
IS66WVD2M16DALL 32Mb Async and Burst CellularRAM
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Full PDF Text Transcription

Click to expand full text
IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode.
Published: |