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IS66WVD2M16ALL - 32Mb Async and Burst CellularRAM

Description

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The 32Mb DRAM core device is organized as 2 Meg x 16 bits.

Features

  • Single device supports asynchronous and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • Multiplexed address and data bus.
  • ADQ0~ADQ15.
  • Asynchronous mode read access : 70ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16 or Continuous.
  • Low Power Consumption.
  • Asynchronous Operation < 25 mA.
  • Burst operation < 35 mA (@10.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WVD2M16DALL 32Mb Async and Burst CellularRAM
IS66WVD1M16ALL 16Mb Async and Burst CellularRAM
IS66WVD4M16ALL 64Mb Async and Burst CellularRAM
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
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Full PDF Text Transcription

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IS66WVD2M16ALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode.
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