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IS65WV2568EALL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV2568EALL, a member of the IS62WV2568EALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 18 mA (max) at 85°C.
  • CMOS Standby Current: 5.4uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62WV2568EALL).
  • 2.2V-3.6V VDD (IS62/65WV2568EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Datasheet preview – IS65WV2568EALL

Datasheet Details

Part number IS65WV2568EALL
Manufacturer ISSI
File Size 805.03 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS65WV2568EALL Datasheet
Additional preview pages of the IS65WV2568EALL datasheet.

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Full PDF Text Transcription

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IS62WV2568EALL IS62/65WV2568EBLL 256Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MARCH 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62WV2568EALL) – 2.2V-3.6V VDD (IS62/65WV2568EBLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
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