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IS65WV25616EBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV25616EBLL, a member of the IS62WV25616EALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV25616EALL).
  • 2.2V-3.6V VDD (IS62/65WV25616EBLL).
  • 3.3V +/-5% VDD (IS62/65WV25616ECLL).
  • Package : 44-pin TSOP (Type II) 48-pin mini BGA.
  • Commercial, Industrial and Automotive temperature support.

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Datasheet preview – IS65WV25616EBLL

Datasheet Details

Part number IS65WV25616EBLL
Manufacturer ISSI
File Size 749.93 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS65WV25616EBLL Datasheet
Additional preview pages of the IS65WV25616EBLL datasheet.

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Full PDF Text Transcription

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IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2018 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EBLL) – 3.3V +/-5% VDD (IS62/65WV25616ECLL)  Package : 44-pin TSOP (Type II) 48-pin mini BGA  Commercial, Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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