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IS61QDPB44M18A1 - 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM

This page provides the datasheet information for the IS61QDPB44M18A1, a member of the IS61QDPB44M18A 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM family.

Datasheet Summary

Description

at page 6 for each ODT option.

The 72Mb IS61QDPB42M36A/A1/A2 and IS61QDPB44M18A/A1/A2 are synchronous, highperformance CMOS static random access memory (SRAM) devices.

These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround.

Features

  • 2Mx36 and 4Mx18 configuration available.
  • On-chip Delay Locked Loop (DLL) for wide data valid window.
  • Separate independent read and write ports with concurrent read and write operations.
  • Synchronous pipeline read with late write operation.
  • Double Data Rate (DDR) interface for read and write input ports.
  • 2.5 cycle read latency.
  • Fixed 4-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and contr.

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Datasheet preview – IS61QDPB44M18A1

Datasheet Details

Part number IS61QDPB44M18A1
Manufacturer ISSI
File Size 698.51 KB
Description 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM
Datasheet download datasheet IS61QDPB44M18A1 Datasheet
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Full PDF Text Transcription

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IS61QDPB44M18A/A1/A2 IS61QDPB42M36A/A1/A2 4Mx18, 2Mx36 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM (2.5 Cycle Read Latency) NOVEMBER 2014 FEATURES  2Mx36 and 4Mx18 configuration available.  On-chip Delay Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.5 cycle read latency.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  Data Valid Pin (QVLD).  +1.8V core power supply and 1.5, 1.
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