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IS61LF409618B - 2M x 36 / 4M x 18 / 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

Download the IS61LF409618B datasheet PDF. This datasheet also covers the IS61LF204836B variant, as both devices belong to the same 2m x 36 / 4m x 18 / 72 mb synchronous flow-through static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The 72Mb product family

Features

  • Internal self-timed write cycle.
  • Individual Byte Write Control and Global Write.
  • Clock controlled, registered address, data and control.
  • Burst sequence control using MODE input.
  • Three chip enable option for simple depth expansion and address pipelining.
  • Common data inputs and data outputs.
  • Auto Power-down during deselect.
  • Single cycle deselect.
  • Snooze MODE for reduced-power standby.
  • JTAG Boundary.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61LF204836B_ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61LF204836B, IS61VF/VVF204836B IS61LF409618B, IS61VF/VVF409618B 2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs and data outputs • Auto Power-down during deselect • Single cycle deselect • Snooze MODE for reduced-power standby • JTAG Boundary Scan for PBGA package • Power Supply LF: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) VF: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%) VVF: Vdd 1.8V (+ 5%), Vddq 1.
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