R6024KNJ - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤0.165Ω.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	R6024KNJ
Manufacturer	INCHANGE
File Size	315.45 KB
Description	N-Channel MOSFET
Datasheet	R6024KNJ Datasheet
Additional preview pages of the R6024KNJ datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.165Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Tstg Operating Junction And Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage CONDITIONS VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID= 0.

Published: Nov 27, 2020 |