R6024ENX - N-Channel MOSFET

Features

With TO-220F packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	R6024ENX
Manufacturer	INCHANGE
File Size	250.33 KB
Description	N-Channel MOSFET
Datasheet	R6024ENX Datasheet
Additional preview pages of the R6024ENX datasheet.

📁 Similar Datasheet

R6024ENX - Power MOSFET (ROHM)
R6024ENJ - Power MOSFET (ROHM)
R6024ENZ - Power MOSFET (ROHM)
R6024ENZ1 - Power MOSFET (ROHM)
R6024KNJ - Nch 600V 24A Power MOSFET (ROHM)
R6024KNX - Power MOSFET (ROHM)
R6024KNZ - Power MOSFET (ROHM)
R6024KNZ1 - Power MOSFET (ROHM)
R6020422 - Fast Recovery Rectifier (Powerex Power Semiconductors)
R6020425 - Fast Recovery Rectifier (Powerex Power Semiconductors)

Other Datasheets by INCHANGE

R6024ENJ - N-Channel MOSFET
R6024ENZ - N-Channel MOSFET
R6024ENZ1 - N-Channel MOSFET
R6024KNJ - N-Channel MOSFET
R6024KNX - N-Channel MOSFET
R6024KNZ - N-Channel MOSFET
R6024KNZ1 - N-Channel MOSFET
R6020ENJ - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 24 IDM Drain Current-Single Pulsed 72 PD Total Dissipation 74 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.

Published: Oct 7, 2020 |