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MJ13333 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) Reversed Biased SOA with Inductive Loads Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators Inverters Solenoid and Relay Dri

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Brand Logo Part Number Description Manufacturer
Motorola Logo MJ13333 20 AMPERE NPN SILICON POWER TRANSISTORS Motorola
ON Logo MJ13333 NPN SILICON POWER TRANSISTORS ON

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Full PDF Text Transcription for MJ13333 (Reference)

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isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loads ·Minimum Lot-to-Lo...

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00V(Min) · Reversed Biased SOA with Inductive Loads ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARA