Datasheet4U Logo Datasheet4U.com

MJ13332 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is crit

📥 Download Datasheet

Full PDF Text Transcription for MJ13332 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJ13332. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robus...

View more extracted text
0V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.

More Datasheets from Inchange Semiconductor

Part Number Description
MJ13330 NPN Transistor
MJ13331 NPN Transistor
MJ13333 NPN Transistor
MJ13334 NPN Transistor
MJ13335 NPN Transistor
MJ13070 NPN Transistor
MJ13071 NPN Transistor
MJ13080 NPN Transistor
MJ13081 NPN Transistor
MJ13090 NPN Transistor