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MJ12003 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in CRT deflection circuits.

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Full PDF Text Transcription for MJ12003 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJ12003. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum L...

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50V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in CRT deflection circuits.

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