Datasheet4U Logo Datasheet4U.com

MJ12002 - NPN Transistor

General Description

High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits.

📥 Download Datasheet

Full PDF Text Transcription for MJ12002 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJ12002. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe...

View more extracted text
% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IE Emitter Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJ12002 isc website：www.iscsemi.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Motorols Logo MJ12002 2.5 Amp NPN Silicon Power Transistor Motorols

More Datasheets from Inchange Semiconductor

Part Number Description
MJ12003 NPN Transistor
MJ12004 NPN Transistor
MJ12005 NPN Transistor
MJ12020 NPN Transistor
MJ12021 NPN Transistor
MJ12022 NPN Transistor
MJ1000 NPN Transistor
MJ10002 NPN Transistor
MJ10005 NPN Transistor
MJ10005P NPN Transistor