MBR3060CT
FEATURES
- Schottky Barrier Chip
- Dual Rectifier Conduction, Positive Center Tap
- Low Power Loss/High Efficiency
- High Current Capability, Low Forward Voltage Drop
- High Surge Capacity
- Guarding for Overvoltage protection
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 130℃
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
A wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃ dv/dt Voltage Rate of...
