Download MBR3060 Datasheet PDF
Inchange Semiconductor
MBR3060
FEATURES - Low forward voltage - Guarding for stress protection - 150℃ operating junction temperature - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS - Case: TO-220 package - Mounting position: Any ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage VRMS Maximum RMS Voltage Maximum DC Blocking Voltage IF(AV) IFSM TJ Average Rectified Forward Current Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load 300 (JEDEC method) Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor MAX 1.4...