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IXTH270N04T4 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 100 UNIT V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 230 A IDM Drain Current-Single Pulsed 500 A PD Total Dissipation @TC=25℃ 650 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBO L PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
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