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IXTC75N10 - N-Channel MOSFET

Features

  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTC75N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 72 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 230 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
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