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Preliminary Technical Information
TrenchMVTM
IXTC110N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 V 78 A 9.0 mΩ
Symbol
V DSS
VDGR
VGSM
ID25 ILRMS I
DM
IAR EAS
dv/dt
P D
TJ TJM Tstg
TL T
SOLD
VISOL
FC
Weight
Test Conditions
T J
= 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
Maximum Ratings
55
V
55
V
± 20
V
TC = 25°C Package Current Limit, RMS
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω
T C
= 25°C
78
A
75
A
600
A
25
A
500
mJ
3
V/ns
100
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
1.6 mm (0.062 in.
IXTC110N055T Datasheet
