IRF5305S
FEATURES
- Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Fast switching application.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-55
Gate-Source Voltage
±20
Drain Current-Continuous
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
UNIT
Rth(j-c) Channel-to-case thermal resistance
℃/W
IRF5305S isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc P-Channel MOSFET...
