IRF5305L
FEATURES
- Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Fast switching application.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
VALUE -55 ±20 -22 110
-55~175 -55~175
UNIT V V A W ℃ ℃
MAX 1.4
UNIT ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS...
