Datasheet4U Logo Datasheet4U.com

IPA90R500C3 - N-Channel MOSFET

Datasheet Summary

Features

  • Drain-source on-resistance: RDS(on) ≤ 0.5Ω@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IPA90R500C3

Datasheet Details

Part number IPA90R500C3
Manufacturer INCHANGE
File Size 235.17 KB
Description N-Channel MOSFET
Datasheet download datasheet IPA90R500C3 Datasheet
Additional preview pages of the IPA90R500C3 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IPA90R500C3, IIPA90R500C3 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.5Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 34 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.7 UNIT ℃/W isc website：www.iscsemi.
Published: |