IPA90R340C3 - N-Channel MOSFET

Datasheet Summary

Features

With TO-220F Package.
Drain Source Voltage- : VDSS=900V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.34Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IPA90R340C3
Manufacturer	INCHANGE
File Size	221.53 KB
Description	N-Channel MOSFET
Datasheet	IPA90R340C3 Datasheet
Additional preview pages of the IPA90R340C3 datasheet.

📁 Similar Datasheet

IPA90R340C3 - CoolMOS Power Transistor (Infineon Technologies)
IPA90R1K0C3 - CoolMOS Power Transistor (Infineon Technologies)
IPA90R1K2C3 - CoolMOS Power Transistor (Infineon Technologies)
IPA90R500C3 - CoolMOS Power Transistor (Infineon Technologies)
IPA90R800C3 - CoolMOS Power Transistor (Infineon Technologies)
IPA95R1K2P7 - MOSFET (Infineon)
IPA95R450P7 - MOSFET (Infineon)
IPA95R450P7 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IPA95R450PFD7 - MOSFET (Infineon)
IPA95R750P7 - MOSFET (Infineon)

Other Datasheets by INCHANGE

IPA90R1K2C3 - N-Channel MOSFET
IPA90R500C3 - N-Channel MOSFET
IPA029N06N - N-Channel MOSFET
IPA030N10N3 - N-Channel MOSFET
IPA032N06N3 - N-Channel MOSFET
IPA037N08N3 - N-Channel MOSFET
IPA040N06N - N-Channel MOSFET
IPA041N04N - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.34Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 15 9.5 A IDM Drain Current-Single Pulsed 34 A PD Total Dissipation @TC=25℃ 35 W Tj Max.

Published: Oct 28, 2020 |