Datasheet4U Logo Datasheet4U.com

BUZ11A - N-Channel MOSFET

Features

  • Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max).
  • Avalanche rugged technology.
  • High current capability.
  • 175℃ Operating Temperature.
  • High speed switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – BUZ11A

Datasheet Details

Part number BUZ11A
Manufacturer INCHANGE
File Size 224.59 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ11A Datasheet
Additional preview pages of the BUZ11A datasheet.

📁 Similar Datasheet

  • BUZ11A - N-Channel MOSFET (STMicroelectronics)
  • BUZ11A - Power Transistor (Siemens Semiconductor Group)
  • BUZ11AL - Power Transistor (Siemens Semiconductor Group)
  • BUZ11 - N-CHANNEL MOSFET (STMicroelectronics)
  • BUZ11 - Power Transistor (Siemens Semiconductor Group)
  • BUZ11 - N-Channel Power MOSFET (Intersil Corporation)
  • BUZ11 - N-Channel Power MOSFET (ON Semiconductor)
  • BUZ11 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • BUZ110S - Power Transistor (Siemens Semiconductor Group)
  • BUZ110SL - Power Transistor (Siemens Semiconductor Group)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current,high speed switching ·Solenoid and relay drivers ·Regulators ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 26 A IDM Drain Current-Single Plused 104 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Published: |