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BUY72 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general switching applications at higher outputs.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.
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