Click to expand full text
isc Silicon NPN Power Transistor
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high voltage CRT scanning applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
BUY71
·
isc website：www.iscsemi.
BUY71 Datasheet
