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BUK454-200A - N-Channel MOSFET

Description

Drain Source Voltage- : VDSS=200V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage Drain BUK454-200A ID Current-continuou s@ TC=37℃ BUK454-200B Ptot Total Dissipation@TC=25℃ ±30 V 9.2 A 8.2 90 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
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