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BU826A - Silicon NPN Darlington Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as: Switching regulators Inverters S

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isc Silicon NPN Darlington Power Transistor BU826A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage(VBE= 0) 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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