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BU806 - Silicon NPN Darlington Power Transistor

Description

High Voltage: VCEV= 400V(Min) Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS

CRT’s.

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BU806 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s.
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