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BDX69B - NPN Transistor

Download the BDX69B datasheet PDF. This datasheet also covers the BDX69 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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Note: The manufacturer provides a single datasheet file (BDX69-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX69 80 BDX69A 100 VCBO Collector-Base Voltage BDX69B 120 BDX69C 140 BDX69 60 BDX69A 80 VCEO Collector-Emitter Voltage BDX69B 100 BDX69C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 25 ICM Collector Current-Peak 40 IB Base Current 500 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Temperature 200 Tstg Storage Temperature Range
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