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BDX69 - NPN Transistor

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX69 80 BDX69A 100 VCBO Collector-Base Voltage BDX69B 120 BDX69C 140 BDX69 60 BDX69A 80 VCEO Collector-Emitter Voltage BDX69B 100 BDX69C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 25 ICM Collector Current-Peak 40 IB Base Current 500 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Temperature 200 Tstg Storage Temperature Range
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