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BDX68B - PNP Transistor

Download the BDX68B datasheet PDF. This datasheet also covers the BDX68 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= -20A Low Saturation Voltage Complement to Type BDX69/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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Note: The manufacturer provides a single datasheet file (BDX68-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -20A ·Low Saturation Voltage ·Complement to Type BDX69/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX68 -80 VCBO Collector-Base Voltage BDX68A BDX68B -100 -120 BDX68C -140 BDX68 -60 VCEO BDX68A Collector-Emitter Voltage BDX68B -80 -100 BDX68C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -25 ICM Collector Current-Peak -40 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -500 150 200 Tstg Storage Temperature Ra
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