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BDX68 - PNP Transistor

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= -20A Low Saturation Voltage Complement to Type BDX69/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -20A ·Low Saturation Voltage ·Complement to Type BDX69/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX68 -80 VCBO Collector-Base Voltage BDX68A BDX68B -100 -120 BDX68C -140 BDX68 -60 VCEO BDX68A Collector-Emitter Voltage BDX68B -80 -100 BDX68C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -25 ICM Collector Current-Peak -40 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -500 150 200 Tstg Storage Temperature Ra
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