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BDX67B - NPN Transistor

Download the BDX67B datasheet PDF. This datasheet also covers the BDX67 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicat

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Note: The manufacturer provides a single datasheet file (BDX67-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Temperature 200 Tstg Storage Temperature Range
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