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BDX67 - NPN Transistor

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicat

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Temperature 200 Tstg Storage Temperature Range
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