Datasheet4U Logo Datasheet4U.com

BDT62B - Silicon PNP Darlington Power Transistors

Download the BDT62B datasheet PDF. This datasheet also covers the BDT62 variant, as both devices belong to the same silicon pnp darlington power transistors family and are provided as variant models within a single manufacturer datasheet.

Description

DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operat

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDT62-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter Voltage BDT62A BDT62B -80 -100 BDT62C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collecto
Published: |