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BDT62 - Silicon PNP Darlington Power Transistors

Description

DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operat

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Part Number Description Manufacturer
BDT62 Silicon Darlington Power Transistors MAGNA TEC
BDT62A Silicon Darlington Power Transistors MAGNA TEC
BDT62B Silicon Darlington Power Transistors MAGNA TEC
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isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter Voltage BDT62A BDT62B -80 -100 BDT62C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collecto
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