Datasheet4U Logo Datasheet4U.com

BD679A - NPN Transistor

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 80V DC Current Gain : hFE = 750(Min) @ IC= 2 A Complement to Type BD680A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD679A Complementary power Darlington transistors STMicroelectronics
BD679A NPN Epitaxial Silicon Transistor Fairchild Semiconductor
BD679A NPN Transistor Motorola Inc
BD679A NPN Silicon Transistor ON Semiconductor
BD679A (BD675A - BD681) SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
BD679 NPN Transistor
BD675 NPN Transistor
BD675A NPN Transistor
BD676 PNP Transistor
BD676A PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor BD679A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD680A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP *Collector Current (Pulse) 6 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 0.
Published: |