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BD679 - NPN Transistor

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 80V DC Current Gain : hFE = 750(Min) @ IC= 1.5 A Complement to Type BD680 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output dev

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD680 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 0.
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