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BD582 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) Complement to Type BD581 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon PNP Power Transistors INCHANGE Semiconductor BD582 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type BD581 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
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