BD501B - Silicon NPN Power Transistors

This page provides the datasheet information for the BD501B, a member of the BD501 Silicon NPN Power Transistors family.

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complement

INCHANGE

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Datasheet Details

Part number	BD501B
Manufacturer	Inchange Semiconductor
File Size	191.44 KB
Description	Silicon NPN Power Transistors
Datasheet	BD501B Datasheet
Additional preview pages of the BD501B datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Published: Feb 18, 2014 |