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BD249C - NPN Transistor

Download the BD249C datasheet PDF. This datasheet also covers the BD249 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= 25A Complement to Type BD250/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

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Note: The manufacturer provides a single datasheet file (BD249-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BD249C NPN High-Power Transistor ON Semiconductor
BD249C NPN SILICON POWER TRANSISTORS Power Innovations Limited
BD249C SILICON POWER TRANSISTOR SavantIC
BD249 NPN SILICON POWER TRANSISTORS Power Innovations Limited
BD249 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
BD249 NPN Transistor
BD249A NPN Transistor
BD249B NPN Transistor
BD240 PNP Transistor
BD240A PNP Transistor

Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 25A ·Complement to Type BD250/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD249 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD249A BD249B 70 90 V BD249C 115 BD249 45 VCEO Collector-Emitter Voltage BD249A 60 V BD249B 80 BD249C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 3 W 125 150 ℃ Tstg Storage
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