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BD249 - NPN Transistor

Description

Collector Current -IC= 25A Complement to Type BD250/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

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Part Number Description Manufacturer
BD249 NPN SILICON POWER TRANSISTORS Power Innovations Limited
BD249 SILICON POWER TRANSISTOR SavantIC
BD249A NPN SILICON POWER TRANSISTORS Power Innovations Limited
BD249A SILICON POWER TRANSISTOR SavantIC
BD249B NPN SILICON POWER TRANSISTORS Power Innovations Limited

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 25A ·Complement to Type BD250/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD249 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD249A BD249B 70 90 V BD249C 115 BD249 45 VCEO Collector-Emitter Voltage BD249A 60 V BD249B 80 BD249C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 3 W 125 150 ℃ Tstg Storage
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