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2SD1255 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier app

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SD1255 VALUE UNIT 130 V 80 V 7 V 4 A 8 A 35 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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