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2SC3894 - NPN Transistor

Description

High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM R

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3894 isc website：www.iscsemi.
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