Datasheet4U Logo Datasheet4U.com

2SC3890 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 3A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator an

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3890 Silicon NPN Transistor Sanken electric
2SC3890 SILICON POWER TRANSISTOR SavantIC
2SC3892 SILICON POWER TRANSISTOR SavantIC
2SC3892A SILICON POWER TRANSISTOR SavantIC
2SC3893 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3892 NPN Transistor
2SC3893 NPN Transistor
2SC3894 NPN Transistor
2SC3895 NPN Transistor
2SC3896 NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3890 isc website：www.
Published: |