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2SC3177 - NPN Transistor

General Description

With TO-126 packaging Low collector-to-emitter saturation voltage Fast switching speed

performance and reliable operation.

Relay drivers High-speed inverters Converters Switching applications ABSOL

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 packaging ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3177 isc website：www.iscsemi.