2SC3172 - Silicon NPN Transistor

Toshiba

Key Features

. High Conversion Gain : G ce=26dB (Typ. ) . Low Reverse Transfer Capacitance : C re=0.4pF (Typ. ) 2SC3172 Unit in mm.

2SC3172 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3172
Manufacturer	Toshiba
File Size	125.21 KB
Description	Silicon NPN Transistor
Datasheet	2SC3172 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL PLANAR TYPE TV VHF MIXER APPLICATIONS. FEATURES . High Conversion Gain : G ce=26dB (Typ.) . Low Reverse Transfer Capacitance : C re=0.4pF (Typ.) 2SC3172 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC -stg RATING 30 20 50 25 200 125 -55-125 UNIT 4.2 MAX. d 1. BASE mA 2. EMITTER mA 3. COLLECTOR 4. EMITTER mW °C TOSHIBA Weight : 0.