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2SC2373 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A, IB= 0.5A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A, IB= 0.5A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output for B/W TV applications.
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