Datasheet4U Logo Datasheet4U.com

2SC2371 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for video applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2371 TRANSISTOR CDIL
2SC2371 NPN Silicon Power Transistors MCC
2SC2373 SILICON POWER TRANSISTOR SavantIC
2SC2377 Silicon NPN Transistor Panasonic Semiconductor
2SC2379 Silicon NPN Transistor Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2373 NPN Transistor
2SC2304 NPN Transistor
2SC2305 NPN Transistor
2SC2307 NPN Transistor
2SC2316 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for video applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2371 isc website：www.iscsemi.